Synchrotron x-ray scattering study of lattice relaxation in InN epitaxial layers on sapphire(0001) during dc sputter growth

Journal of Applied Physics

Volumn 92, Issue 10, 2002, Pages 5814-5818

  Lee, Ik Jae ^a   Kim, Jin Woo ^b   Hwang, Yoon Hwae ^c   Kim, Hyung Kook ^c  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

^b Gwangju Institute of Science and Technology (GIST)   (South Korea)

^c Pusan National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DOMAIN MATCHING; FILMS THINNER; HIGH RESOLUTION; HIGHLY STRAINED; LATTICE RELAXATION; MAGNETRON-SPUTTERING DEPOSITION; ROCKING CURVES; SYNCHROTRON X-RAY SCATTERING; X RAY REFLECTIVITY;

ATOMIC FORCE MICROSCOPY; EPITAXIAL GROWTH; EPITAXIAL LAYERS; SAPPHIRE; X RAY POWDER DIFFRACTION; X RAY SCATTERING;

X RAYS;

EID: 0037112961     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1515952     Document Type: Article

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