Direct observation of strained layer formation at the initial stage of In thin film growth on Si(100)

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 6 B, 1999, Pages 3849-3852

  Kubo, Osamu ^a   Ryu, Jeong Tak ^a   Tani, Hitoshi ^a   Harada, Toru ^a   Katayama, Mitsuhiro ^a   Oura, Kenjiro ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

FILM GROWTH; LATTICE CONSTANTS; METALLIC FILMS; MONOLAYERS; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING INDIUM; SEMICONDUCTING SILICON; THIN FILMS;

STRAINED LAYER FORMATION;

SEMICONDUCTING FILMS;

EID: 0032594523     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.3849     Document Type: Article

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