Electromigration failure distributions of Cu/Low-k dual-damascene vias: Impact of the critical current density and a new reliability extrapolation methodology

IEEE Transactions on Device and Materials Reliability

Volumn 9, Issue 2, 2009, Pages 244-254

  Oates, Anthony S ^a   Lin, M H ^a  

^a TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

Backflow; Blech length; Cu; Dual damascene; Electromigration; Failure distribution; Low k; Reliability; Via; Void

Indexed keywords

BACKFLOW; BLECH-LENGTH; CU; DUAL DAMASCENE; FAILURE DISTRIBUTION; LOW-K; VIA; VOID;

APPROXIMATION THEORY; EXTRAPOLATION; FAILURE ANALYSIS; INTEGRATED CIRCUITS; MORPHOLOGY; OPTICAL INTERCONNECTS;

ELECTROMIGRATION;

EID: 67650287416     PISSN: 15304388     EISSN: 15304388     Source Type: Journal    
DOI: 10.1109/TDMR.2009.2015767     Document Type: Article

References (23)

1. J. Gill, T. Sullivan, S. Yankee, H. Barth, and A. von Glasow, "Investigation of via-dominated multi-modal electromigration failure distributions in dual damascene Cu interconnects with a discussion of the statistical implications," in Proc. Int. Rel. Phys. Symp., 2002, pp. 298-304.
2. S. C. Lee and A. S. Oates, "Identification and analysis of dominant electromigration failure modes in copper/low-κ dual damascene interconnects," in Proc. Int. Rel. Phys. Symp., 2006, pp. 107-114.
3. I. A. Blech, "Electromigration in thin aluminum films on titanium nitride," J. Appl. Phys., vol. 47, no. 4, pp. 1203-1208, Apr. 1976.
4. R. A. Wachnik, R. G. Filippi, T. M. Shaw, and P. C. Lin, "Practical benefits of the electromigration short-length effect, including a new design rule methodology and an electromigration resistant power grid with enhanced wireability," in VLSI Symp. Tech. Dig., 2000, pp. 220-221.
5. S. P. Hau-Riege, "Probabilistic immortality of Cu damascene interconnects," J. Appl. Phys., vol. 91, no. 4, pp. 2014-2022, Feb. 2002.
6. S. Thrasher, M. Gall, C. Capasso, P. Justison, R. Hernandez, T. Nguyen, and H. Kawasaki, "Examination of critical length effect in copper interconnects with oxide and low-κ dielectrics," in Proc. 7th Int. Workshop Stress-Induced Phenom. Metallizations, 2004, pp. 165-172.
7. J. S. Huang and A. S. Oates, "Monte-Carlo simulation of electromigration failure distributions of submicron contacts and vias: A new extrapolation methodology for reliability estimate," in Proc. IITC, 2000, pp. 208-210.
8. A. S. Oates and M. H. Lin, "Analysis and modeling of critical current density effects on electromigration failure distributions of Cu dual-damascene vias," in Proc. Int. Rel. Phys. Symp., 2008, pp. 385-391.
9. J. R. Lloyd, "Black's law revisited - Nucleation and growth in electromigration failure," Microelectron. Reliab., vol. 47, no. 9-11, pp. 1468-1472, Sep.-Nov. 2007.
10. M. A. Korhonen, P. Borgesen, K. N. Tu, and C. Y. Li, "Stress evolution due to electromigration in confined metal lines," J. Appl. Phys., vol. 73, no. 8, pp. 3790-3799, Apr. 1993.
11. E. Zschech, P. S. Ho, D. Schmeisser, M. Meyer, A. Vairagar, G. Schneider, M. Haushildt, M. Kraatz, and V. Sukarev, "Geometry and microstructure effect on EM-induced copper interconnect degradation," IEEE Trans. Device Mater. Rel., vol. 9, no. 1, pp. 20-30, Mar. 2009.
12. J. J. Clement, "Electromigration modeling for integrated circuit interconnect reliability analysis," IEEE Trans. Device Mater. Rel., vol. 1, no. 1, pp. 33-42, Mar. 2001.
13. E. Liniger, L. Gignac, C.-K. Hu, and S. Kaldor, " In situ study of void growth kinetics in electroplated Cu lines," J. Appl. Phys., vol. 92, no. 4, pp. 1803-1810, Aug. 2002.
14. A. V. Vairagar, S. G. Mhaisalkar, M. A. Meyer, E. Zschech, A. Krishnamoorthy, K. N. Tu, and A. M. Gusak, "Direct evidence of electromigration failure mechanism in dual-damascene Cu interconnect tree structures," Appl. Phys. Lett., vol. 87, no. 8, p. 081 909, Aug. 2005.
15. E. G. Liniger, C. K. Hu, L. M. Gignac, and A. Simon, "Effect of liner thickness on electromigration lifetime," J. Appl. Phys., vol. 93, no. 12, pp. 9576-9582, Jun. 2003.
16. J. J. Clement, "Reliability analysis for encapsulated interconnect lines under dc and pulsed dc current using a continuum electromigration transport model," J. Appl. Phys., vol. 82, no. 12, pp. 5991-6000, Dec. 1997.
17. A. T. English and E. Kinsbron, "Electromigration transport mobility associated with pulsed direct current in fine-grained evaporated Al-0.5%Cu thin films," J. Appl. Phys., vol. 54, no. 1, pp. 275-280, Jan. 1983.
18. K. D. Lee, Y. J. Park, T. Kim, and W. R. Hunter, "Via processing effects on electromigration in 65 nm technology," in Proc. Int. Rel. Phys. Symp., 2006, pp. 103-106.
19. A. H. Fischer, A. von Glasow, S. Penka, and F. Ungar, "Process optimization - The key to obtain highly reliable Cu interconnects," in Proc. IITC, 2003, pp. 253-255.
20. A. S. Oates, "Electromigration failure distribution of contacts and vias as a function of stress conditions in submicron IC metallizations," in Proc. Int. Rel. Phys. Symp., 1996, pp. 164-171.
21. A. S. Oates, "Electromigration failure of contacts and vias in sub-micron integrated circuit metallizations," Microelectron. Reliab., vol. 36, no. 7/8, pp. 925-953, Jul./Aug. 1996.
22. A. S. Oates and S. C. Lee, "Electromigration failure distributions of dual damascene Cu /low-κ interconnects," Microelectron. Reliab., vol. 46, no. 9-11, pp. 1581-1586, Sep.-Nov. 2006.
23. B. Li, C. Christiansen, J. Gill, T. Sullivan, E. Yashchin, and R. Filippi, "Threshold electromigration failure time and its statistics for Cu interconnects," J. Appl. Phys., vol. 100, no. 11, p. 114 516, Dec. 2006.