Analysis and modeling of critical current density effects on electromigration failure distributions of Cu dual-damascene vias

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2008, Pages 385-391

  Oates, A S ^a   Lin, M H ^a  

^a TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

COPPER; CRITICAL CURRENT DENSITY (SUPERCONDUCTIVITY); CRITICAL CURRENTS; ELECTRIC CONDUCTIVITY; ELECTROMIGRATION; IMAGE SEGMENTATION; RELIABILITY; SUPERCONDUCTIVITY;

CRITICAL CURRENT DENSITY; FAILURE DISTRIBUTIONS; RELIABILITY PHYSICS;

FAILURE ANALYSIS;

EID: 51549093185     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2008.4558917     Document Type: Conference Paper

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