Monte-Carlo simulation of electromigration failure distributions of submicron contacts and vias: A new extrapolation methodology for reliability estimate

Proceedings of the IEEE 2000 International Interconnect Technology Conference, IITC 2000

Volumn , Issue , 2000, Pages 208-210

  Huang, J S ^a   Oates, A S ^a  

^a NOKIA RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; ELECTROMIGRATION; EXTRAPOLATION; INTELLIGENT SYSTEMS;

ELECTROMIGRATION FAILURES; FAILURE DISTRIBUTIONS; FAILURE TIME; FORM CHANGES; FUNCTIONAL FORMS; LOG-NORMAL DISTRIBUTION; RELIABILITY ESTIMATES; VIA ELECTROMIGRATION;

MONTE CARLO METHODS;

EID: 84962909795     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IITC.2000.854327     Document Type: Conference Paper

References (5)

1. A. S. Oates, J. Appl. Phys., 70, 5369, (1991).
2. P.S. Ho and T. Kwok, Rep. Prog. Phys. 52, 301 (1989).
3. D.G. Pierce and P.G. Brusius, Microelectron. Reliab. 37, 1053 (1997).
4. J.S. Huang and A.S. Oates, in Symposium "Interconnects and Contact Metallization for ULSI", Edited by G.S. Mathad and D. Misra, The Electrochem. Soc. Meeting (ECS, Honolulu, Hawaii, 1999) in press.
5. th Int. Rel. Phys. Symp., 164 (1996).