Current-voltage behaviour of Schottky diodes fabricated on p-type silicon for radiation hard detectors

Physica B: Condensed Matter

Volumn 404, Issue 16, 2009, Pages 2251-2258

  Moloi, S J ^a   McPherson, M ^b  

^a NORTH WEST UNIVERSITY   (South Africa)

^b McPherso Academic Consulting   (South Africa)

Author keywords

Conductivity; Current; Diode; Schottky; Semiconductor; Silicon

Indexed keywords

CONDUCTIVITY; CURRENT; CURRENT VOLTAGE; CURRENT-VOLTAGE MEASUREMENTS; DEFECT LEVELS; DEVICE CURRENTS; DOPED DEVICES; IDEALITY FACTORS; METAL-DOPED; P-TYPE SILICON; RADIATION HARD DETECTORS; SATURATION CURRENT; SCHOTTKY; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY DIODES; SEMICONDUCTOR;

DIODES; DOPING (ADDITIVES); ELECTRIC POTENTIAL; ERBIUM; METALS; NIOBIUM; PLATINUM; RADIATION DETECTORS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON; SEMICONDUCTOR DIODES; SILICON DETECTORS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 67650113623     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2009.04.021     Document Type: Article

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