Radiation hardness of silicon detectors based on pre-irradiated silicon

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 568, Issue 1, 2006, Pages 78-82

  Litovchenko, P G ^a   Groza, A A ^a   Lastovetsky, V F ^a   Barabash, L I ^a   Starchik, M I ^a   Dubovoy, V K ^a   Bisello, D ^b   Giubilato, P ^b   Candelori, A ^b   Rando, R ^b   Litovchenko, A P ^b   Khomenkov, V ^b   Wahl, W ^c   Boscardin, M ^d   Zorzi, N ^d   Dalla Betta, G F ^e   Cindro, V ^f   Mikelsen, M ^g   Monakhov, E V ^g   Svensson, B G ^g  

^a INSTITUTE FOR NUCLEAR RESEARCH   (Ukraine)

^b UNIVERSITY OF PADOVA   (Italy)

^c INSTITUTE OF EPIDEMIOLOGY   (Germany)

^d ITC IRST   (Italy)

^e UNIVERSITY OF TRENTO   (Italy)

^f JO EF STEFAN INSTITUTE   (Slovenia)

^g UNIVERSITY OF OSLO   (Norway)

Author keywords

Defect engineering; Neutron irradiation; Radiation damage; Radiation hardness; Semiconductor detectors; Silicon particle detectors; SLHC; Super LHC

Indexed keywords

ANNEALING; NEUTRON IRRADIATION; RADIATION DAMAGE; RADIATION HARDENING; SEMICONDUCTOR DIODES; SEMICONDUCTOR DOPING;

DEFECT ENGINEERING; DEPLETION VOLTAGE; SEMICONDUCTOR DETECTORS; SILICON PARTICLE DETECTORS;

SILICON SENSORS;

EID: 33750302543     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nima.2006.05.207     Document Type: Article

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