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Volumn 30, Issue 21, 1997, Pages 3028-3035

Suppression of irradiation effects in gold-doped silicon detectors

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; DOPING (ADDITIVES); GOLD; LEAKAGE CURRENTS; NEUTRON IRRADIATION; PHOTOCONDUCTIVITY; PHOTODIODES; RADIATION EFFECTS;

EID: 0031558598     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/30/21/018     Document Type: Article
Times cited : (38)

References (20)
  • 17
  • 18
    • 0031208131 scopus 로고    scopus 로고
    • Semiconductor detectors for use in high radiation damage environments - Semi-insulating GaAs or silicon?
    • Jones B K, Santana J and McPherson M 1997 Semiconductor detectors for use in high radiation damage environments - semi-insulating GaAs or silicon? Nucl. Instrum. Methods A 394 81
    • (1997) Nucl. Instrum. Methods A , vol.394 , pp. 81
    • Jones, B.K.1    Santana, J.2    McPherson, M.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.