Diffusion characteristics of gold in silicon and electrical properties of silicon diodes used for developing radiation-hard detectors

Materials Science and Engineering: B

Volumn 127, Issue 1, 2006, Pages 47-54

  Msimanga, M ^a,b   McPherson, M ^a  

^a NORTH WEST UNIVERSITY   (South Africa)

^b iThemba Labs   (South Africa)

Author keywords

Detector; Gold doping; Radiation; Relaxation; Semiconductor; Silicon

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; DETECTORS; DIFFUSION; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; ELECTRIC PROPERTIES; GOLD; HALL EFFECT; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON; SUBSTRATES;

GOLD DOPING; RADIATION-HARD DETECTOR FABRICATION; RELAXATION;

SCHOTTKY BARRIER DIODES;

EID: 30844471974     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2005.09.060     Document Type: Article

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