Evolution of radiation induced defects and the type inversion in high resistivity silicon under neutron irradiation

Radiation Protection Dosimetry

Volumn 101, Issue 1-4, 2002, Pages 107-110

  Anokhin, I E ^a   Rosenfeld, A B ^b   Zinets, O S ^a   Horowitz, Y S ^c   Oster, L ^c  

^a Institute for nuclear safety   (Ukraine)

^b UNIVERSITY OF WOLLONGONG   (Australia)

^c NONE

Author keywords

[No Author keywords available]

Indexed keywords

AMPHOLYTE; OXYGEN; SILICON;

ARTICLE; CHEMICAL STRUCTURE; CONDUCTANCE; CONTROLLED STUDY; DIODE; DOSIMETRY; FAST NEUTRON RADIATION; MATHEMATICAL MODEL; NEUTRON RADIATION; SENSOR;

EID: 0036390337     PISSN: 01448420     EISSN: None     Source Type: Journal    
DOI: 10.1093/oxfordjournals.rpd.a005947     Document Type: Article

References (6)

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2. Lemeilleur, F., Glaser, M., Heijne. E. H. M., Jarron, P. and Occelli, E. Neutron-induced Radiation Damage in Silicon Detectors. IEEE Trans. Nucl. Sci. NS-39(4), 551-557 (1992).
3. Khivrich, V. I., Varentsov, V. I., Litovchenko, P. G., Anokhin, I. E., Zinets, O. S., Reinhard, M., Rosenfeld, A. B., Carolan, M. G. and Alexiev, D. High Purity Silicon as a Basic Material for Manufacturing of Radiation Detectors. IEEE Trans. Nucl. Sci. NS-43, 2687-2692 (1996).
4. Swartz, J. M. and Thurston, M. O. Analysis of the Effect of Fast-Neutron Bombardment on the Current-Voltage Chararteristics of a Conductivity, Modulated p-i-n Diode. J. Appl. Phys. 37(2), 745-755 (1966).
5. Rosenfeld, A., Kaplan, G., Carolan, M., Allen, B., Anokhin, I., Zinets, O., Khivrich, V. and Litovchenko, P. G. Application of P-I-N Diodes and MOSFET for Dosemeter in Gamma and Neutron Fields. Radiat. Prot. Dosim. 84(1-4), 349-352 (1999).
6. Buehler, M. G. Design Curves for Predicting Fast-Neutron-Induced Resistivity, Changes in Silicon. Proc. IEEE 6(10), 1741-1743 (1968).