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Volumn 90, Issue 10, 2007, Pages

Effects of Al content on the electrical properties of LaxAl yOz films grown on TiN substrate by atomic layer deposition

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION; CURRENT DENSITY; FILM GROWTH; LANTHANUM COMPOUNDS; LEAKAGE CURRENTS; SEMICONDUCTING ALUMINUM COMPOUNDS; TITANIUM NITRIDE;

EID: 33947113495     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2709951     Document Type: Article
Times cited : (15)

References (13)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.