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Volumn 90, Issue 10, 2007, Pages
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Effects of Al content on the electrical properties of LaxAl yOz films grown on TiN substrate by atomic layer deposition
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Author keywords
[No Author keywords available]
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Indexed keywords
ATOMIC LAYER DEPOSITION;
CURRENT DENSITY;
FILM GROWTH;
LANTHANUM COMPOUNDS;
LEAKAGE CURRENTS;
SEMICONDUCTING ALUMINUM COMPOUNDS;
TITANIUM NITRIDE;
LEAKAGE CURRENT DENSITY;
OXIDE THICKNESS;
POSTANNEALING;
THIN FILMS;
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EID: 33947113495
PISSN: 00036951
EISSN: None
Source Type: Journal
DOI: 10.1063/1.2709951 Document Type: Article |
Times cited : (15)
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References (13)
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