Effects of initial stages on the crystal quality of nonpolar a-plane AlN on r-plane sapphire by low-pressure HVPE

Journal of Crystal Growth

Volumn 311, Issue 14, 2009, Pages 3801-3805

  Wu, Jie Jun ^a   Katagiri, Yusuke ^a   Okuura, Kazuki ^a   Li, Da Bing ^a   Miyake, Hideto ^a   Hiramatsu, Kazumasa ^a  

^a MIE UNIVERSITY   (Japan)

Author keywords

A1. Buffer; A1. In plane anisotropy; A1. Nitridation; A1. Nonpolar; A3. Hydride vapor phase epitaxy; B2. a plane AlN

Indexed keywords

A1. BUFFER; A1. IN-PLANE ANISOTROPY; A1. NITRIDATION; A1. NONPOLAR; A3. HYDRIDE VAPOR PHASE EPITAXY; B2. A-PLANE ALN;

ANISOTROPY; CORUNDUM; CRYSTAL GROWTH; SAPPHIRE; SEMICONDUCTING GALLIUM COMPOUNDS; SUPERCONDUCTING FILMS; VAPOR PHASE EPITAXY; VAPORS;

NITRIDATION;

EID: 67649880372     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.06.014     Document Type: Article

References (30)

1. Taniyasu Y., Kasu M., and Makimoto T. Nature 441 (2006) 325
2. Sun W.H., Kuokstis E., Gaevski M., Zhang J.P., Chen C.Q., Wang H.M., Yang J.W., Simin G., Asif Khan M., Gaska R., and Shur M.S. Phys. Status Solidi A 200 (2003) 48
3. Chakraborty A., Haskell B.A., Keller S., Speck J.S., Denbaars S.P., Nakamura S., and Mishra U.K. Appl. Phys. Lett. 85 (2004) 5143
4. Chakraborty A., Haskell B.A., Keller S., Speck J.S., DenBaars S.P., Nakamura S., and Mishra U.K. Jpn. J. Appl. Phys. Part 2 44 (2004) L173
5. Gardner N.F., Kim J.C., Wierer J.J., Shen Y.C., and Krames M.R. Appl. Phys. Lett. 86 (2005) 111101
6. Kumagai Y., Yamane T., and Koukitu A. J. Cryst. Growth. 281 (2005) 62
7. Wang H.M., Chen C.Q., Gong Z., Zhang J.P., Gaevski M., Su M., Yang J.W., and Khan M.A. Appl. Phys. Lett. 84 (2004) 499
8. Hirai A., Jia Z., Schmidt M.C., Farrell R.M., DenBaars S.P., Nakamura S., and Speck J.S. Appl. Phys. Lett. 91 (2007) 191906
9. Kroger R., Paskova T., Figge S., Hommel D., Rosenauer A., and Monemar B. Appl. Phys. Lett. 90 (2007) 081918
10. Craven M.D., Lim S.H., Wu F., Speck J.S., and DenBaars S.P. Appl. Phys. Lett. 81 (2002) 469
11. Horita M., Suda J., and Kimoto T. Appl. Phys. Lett. 89 (2006) 112117
12. Shibata T., Asai K., Nakamura Y., Tanaka M., Kaigawa K., Shibata J., and Sakai H. J. Cryst. Growth 229 (2001) 63
13. Danylyuk Y., Perooly S., Rahman Md., and Auner G. Phys. Status Solidi (c) 2 (2005) 2228
14. Okada N., Kato N., Sato S., Sumii T., Amano H., and Akasaki I. J. Cryst. Growth 300 (2007) 141
15. Okada N., Imura M., Nagai T., Balakrishnan K., Amano H., and Akasaki I. Phys. Status Solidi (c) 4 (2007) 2528
16. Liu Y.H., Tanabe T., Miyake H., Hiramatsu K., Shibata T., Tanaka M., and Masa Y. Jpn. J. Appl. Phys. 44 (2005) L505
17. Paskova T., Darakchieva V., Paskov P.P., Birch J., Valcheva E., Persson P.O.A., Arnaudov B., Tungasmitta S., and Monemar B. J. Cryst. Growth 281 (2005) 55
18. Ko T.S., Wang T.C., Gao R.C., Chen H.G., Huang G.S., Lu T.C., Kuo H.C., and Wang S.C. J. Cryst. Growth 300 (2007) 308
19. Wu Y., Hanlon A., Kaeding J.F., and Sharma R. Appl. Phys. Lett. 84 (2004) 912
20. Araki M., Mochimizo N., Hoshino K., and Tadatomo K. Jpn. J. Appl. Phys. 46 (2007) 555
21. Zhu T., Martin D., Butte R., Napierala J., and Grandjean N. J. Cryst. Growth 300 (2007) 186
22. Roder C., Einfeldt S., Figge S., Paskova T., Hommel D., Paskov P.P., Monemar B., Behn U., Haskell B.A., Fini P.T., and Nakamura S. J. Appl. Phys. 100 (2006) 103511
23. Hollander J.L., Kappers M.J., McAleese C., and Humphreys C.J. Appl. Phys. Lett. 92 (2008) 101104
24. Paskova T., Kroeger R., Figge S., and Hommel D. Appl. Phys. Lett. 89 (2006) 051914
25. Sumiya M., and Fuke S. Appl. Surf. Sci. 244 (2005) 269
26. Vennegues P., and Beaumont B. Appl. Phys. Lett. 75 (1999) 4115
27. Tsuda M., Furukawa H., Honshio A., Iwaya M., Kamiyama S., Amano H., and Akasaki I. Jpn. J. Appl. Phys. 45 (2006) 2509
28. Akasaka T., Kobayashi Y., and Kasu M. Appl. Phys. Lett. 93 (2008) 161908
29. 〈http://www.ioffe.rssi.ru/SVA/NSM/Semicond/AlN/index.html〉
30. Etzkorn E.V., and Clarke D.R. J. Appl. Phys. 89 (2001) 1025