High-quality nonpolar 4H-AlN grown on 4H-SiC (112̄0) substrate by molecular-beam epitaxy

Applied Physics Letters

Volumn 89, Issue 11, 2006, Pages

  Horita, Masahiro ^a   Suda, Jun ^a   Kimoto, Tsunenobu ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NITRIDE; DEFECTS; GROWTH (MATERIALS); HYDROCHLORIC ACID; MOLECULAR BEAM EPITAXY; SILICON CARBIDE; STACKING FAULTS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

ISOPOLYTYPICALLY GROWN; STACKING FAULT DENSITY; THREADING DISLOCATIONS;

HYDROGEN INORGANIC COMPOUNDS;

EID: 33748682357     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2352713     Document Type: Article

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