Growth of a-plane AlN on r-plane sapphire by plasma source molecular beam epitaxy

Physica Status Solidi C: Conferences

Volumn 2, Issue 7, 2005, Pages 2228-2231

  Danylyuk, Yuri ^a   Perooly, Soma ^a   Rahman, Md ^a   Auner, Gregory ^a  

^a Wayne State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; MOLECULAR BEAM EPITAXY; NUCLEATION; PLASMA APPLICATIONS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SAPPHIRE;

ALN NUCLEATION LAYERS; PLASMA SOURCE MOLECULAR BEAM EPITAXY (PSMBE); SAPPHIRE SUBSTRATES;

ALUMINUM NITRIDE;

EID: 27344451394     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200461601     Document Type: Conference Paper

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