Microstructure of a-plane AlN grown on r-plane sapphire and on patterned AlN templates by metalorganic vapor phase epitaxy

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 4, Issue 7, 2007, Pages 2528-2531

  Okada, N ^a   Imura, M ^a   Nagai, T ^a   Balakrishnan, K ^a   Iwaya, M ^a   Kamiyama, S ^a   Amano, H ^a   Akasaki, I ^a   Maruyama, H ^b   Noro, T ^b   Takagi, T ^b   Bandoh, A ^c  

^a MEIJO UNIVERSITY   (Japan)

^b IBIDEN CO LTD   (Japan)

^c High Performance Materials Department   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

A-PLANE; ALN LAYERS; DISLOCATION DENSITIES; EPITAXIAL LATERAL OVERGROWTH; HIGH TEMPERATURES; METAL-ORGANIC VAPOR PHASE EPITAXY; NITRIDE SEMICONDUCTORS; PLANE SAPPHIRE; STACKING FAULTING; TRANSMISSION ELECTRON;

CORUNDUM; CRYSTAL GROWTH; CRYSTALS; ELECTRIC CONDUCTIVITY; MICROSTRUCTURE; MOLECULAR BEAM EPITAXY; NITRIDES; SAPPHIRE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR MATERIALS; STACKING FAULTS; VAPORS;

EPITAXIAL GROWTH;

EID: 49749086119     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200674779     Document Type: Conference Paper

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