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Volumn 96, Issue 1, 2009, Pages 57-60
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Fabrication of Ge nanocrystals doped silica-on-silicon waveguides and observation of their strong quantum confinement effect
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Author keywords
[No Author keywords available]
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Indexed keywords
ABSORPTION PEAKS;
BROADBAND LIGHT SOURCES;
GE NANOCRYSTALS;
LIGHTWAVE CIRCUITS;
MATERIAL CHARACTERISATION;
PLASMA ENHANCED CHEMICAL VAPOUR DEPOSITION;
POTENTIAL APPLICATIONS;
QUANTUM CONFINEMENT EFFECTS;
SILICA MATRIX;
SILICA-ON-SILICON;
WAVEGUIDE STRUCTURE;
WAVELENGTH RANGES;
GERMANIUM;
LIGHT;
LIGHT SOURCES;
NANOCRYSTALS;
OPTOELECTRONIC DEVICES;
PLASMA DEPOSITION;
PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;
QUANTUM CONFINEMENT;
REACTIVE ION ETCHING;
SCANNING ELECTRON MICROSCOPY;
SILICA;
WAVEGUIDES;
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EID: 67649870601
PISSN: 09462171
EISSN: None
Source Type: Journal
DOI: 10.1007/s00340-008-3348-0 Document Type: Article |
Times cited : (2)
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References (31)
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