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Volumn 96, Issue 1, 2009, Pages 57-60

Fabrication of Ge nanocrystals doped silica-on-silicon waveguides and observation of their strong quantum confinement effect

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION PEAKS; BROADBAND LIGHT SOURCES; GE NANOCRYSTALS; LIGHTWAVE CIRCUITS; MATERIAL CHARACTERISATION; PLASMA ENHANCED CHEMICAL VAPOUR DEPOSITION; POTENTIAL APPLICATIONS; QUANTUM CONFINEMENT EFFECTS; SILICA MATRIX; SILICA-ON-SILICON; WAVEGUIDE STRUCTURE; WAVELENGTH RANGES;

EID: 67649870601     PISSN: 09462171     EISSN: None     Source Type: Journal    
DOI: 10.1007/s00340-008-3348-0     Document Type: Article
Times cited : (2)

References (31)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.