A study of the nonlinear absorption of Ge nanocrystallites embedded in SiO2 thin films by the Z-scan technique

Journal of Materials Science Letters

Volumn 15, Issue 3, 1996, Pages 263-265

  Yue, L P ^a   He, Y Z ^a  

^a INSTITUTE OF SOLID STATE PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; HELIUM NEON LASERS; LASER BEAMS; LENSES; LIGHT ABSORPTION; NANOSTRUCTURED MATERIALS; OPTICAL BEAM SPLITTERS; OPTICAL PROPERTIES; OPTICAL VARIABLES MEASUREMENT; SCANNING; SEMICONDUCTING FILMS; SPUTTERING;

BEER-LAMBERT EQUATION; GERMANIUM NANOCRYSTALLITES; ION BEAM SPUTTERING; NONLINEAR ABSORPTION; SILICA THIN FILMS; TRANSMITTANCE; TWO PHOTON ABSORPTION COEFFICIENT; Z SCAN TECHNIQUE;

SEMICONDUCTING GERMANIUM;

EID: 0030083810     PISSN: 02618028     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF00274470     Document Type: Article

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