Visible photoluminescence from Ge nanocrystal embedded into a SiO2 matrix fabricated by atmospheric pressure chemical vapor deposition

Applied Physics Letters

Volumn 68, Issue 9, 1996, Pages 1189-1191

  Dutta, Achyut Kumar ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BINDING ENERGY; CHEMICAL VAPOR DEPOSITION; GRAIN SIZE AND SHAPE; NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE; RAMAN SPECTROSCOPY; SILICA; X RAY PHOTOELECTRON SPECTROSCOPY;

ATMOSPHERIC PRESSURE CHEMICAL VAPOR DEPOSITION; CHEMICAL BONDING; GERMANIUM OXIDE; NANOCRYSTALS; QUANTUM CONFINEMENT;

SEMICONDUCTING GERMANIUM;

EID: 0030083789     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.115964     Document Type: Article

References (8)

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