Ge nanocrystal metal-oxide-semiconductor transistors with Ge nanocrystals formed by thermal oxidation of poly-Si0.88Ge0.12

Semiconductor Science and Technology

Volumn 22, Issue 1, 2007, Pages

  Wu, J H ^a   Li, P W ^a  

^a NATIONAL CENTRAL UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

HYSTERESIS; INTEGRATED CIRCUITS; NANOCRYSTALLINE MATERIALS; NONVOLATILE STORAGE; SEMICONDUCTING GERMANIUM COMPOUNDS; THERMOOXIDATION; THRESHOLD VOLTAGE;

CAPACITANCE-VOLTAGE; CHARGE STORAGE CAPABILITY; THERMAL OXIDATION; THRESHOLD VOLTAGE SHIFT;

MOSFET DEVICES;

EID: 33947167329     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/22/1/S21     Document Type: Article

References (5)

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