Homoepitaxial silicon growth in a non-ultra-high vacuum environment by ion-assisted deposition on Si wafer and seeded glass substrates

Thin Solid Films

Volumn 511-512, Issue , 2006, Pages 41-45

  Straub, Axel ^a   Inns, Daniel ^a   Terry, Mason L ^a   Huang, Yidan ^a   Widenborg, Per I ^a   Aberle, Armin G ^a  

^a UNIVERSITY OF NEW SOUTH WALES   (Australia)

Author keywords

Epitaxy; Silicon; Solar cells; Structural properties

Indexed keywords

CRYSTAL GROWTH; CURRENT DENSITY; POLYCRYSTALLINE MATERIALS; SEMICONDUCTOR DEVICES; SHORT CIRCUIT CURRENTS; SOLAR CELLS; THIN FILMS; ULTRAHIGH VACUUM;

CRYSTALLINE SILICON (C-SI) GROWTH; ION-ASSISTED DEPOSITION (IAD); SACRIFICIAL PROTECTIVE LAYER; STRUCTURAL PROPERTIES;

SILICON;

EID: 33646588336     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2005.12.004     Document Type: Article

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