Large-grained polycrystalline silicon films on glass by argon-assisted ECRCVD epitaxial thickening of seed layers

Journal of Crystal Growth

Volumn 299, Issue 2, 2007, Pages 309-315

  Ekanayake, G ^a   Quinn, T ^a   Reehal, H S ^a   Rau, B ^b   Gall, S ^b  

^a LONDON SOUTH BANK UNIVERSITY   (United Kingdom)

^b HAHN MEITNER INSTITUT   (Germany)

Author keywords

A1. Crystal structure; A3. ECR chemical vapour deposition; A3. Low temperature epitaxy; B2. Semiconducting silicon

Indexed keywords

BACKSCATTERING; CHEMICAL VAPOR DEPOSITION; ELECTRON CYCLOTRON RESONANCE; EPITAXIAL GROWTH; FILM GROWTH; GLASS; POLISHING; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING SILICON;

ALUMINIUM INDUCED CRYSTALLIZATION (AIC); ELECTRON BACKSCATTER DIFFRACTION (EBSD) ANALYSIS; ELECTRON CYCLOTRON RESONANCE CHEMICAL VAPOR DEPOSITION (ECRCVD); LOW TEMPERATURE EPITAXY;

SEMICONDUCTING FILMS;

EID: 33846839168     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.11.327     Document Type: Article

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