Cooperative effects in molecular conduction II: The semiconductor-metal molecular junction

Journal of Physical Chemistry A

Volumn 113, Issue 26, 2009, Pages 7451-7460

  Landau, Arie ^a,c   Nitzan, Abraham ^a   Kronik, Leeor ^b  

^a TEL AVIV UNIVERSITY   (Israel)

^b WEIZMANN INSTITUTE OF SCIENCE   (Israel)

^c UNIVERSITY OF SOUTHERN CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHOICE OF PARAMETERS; COOPERATIVE EFFECTS; CUBIC LATTICE; CURRENT VOLTAGE; INTERMOLECULAR INTERACTIONS; METAL INTERACTIONS; MOLECULAR CONDUCTION; MOLECULAR JUNCTION; MOLECULAR LAYER; NEGATIVE DIFFERENTIAL RESISTANCES; SEMI-CONDUCTOR SURFACES; SEMICONDUCTOR ELECTRODE; SEMICONDUCTOR METALS; SI(1 0 0); SINGLE-MOLECULE JUNCTIONS; SPECTRAL PROPERTIES; SURFACE DENSITY; TIGHT BINDING MODEL; TRANSMISSION COEFFICIENTS; TRANSPORT CHARACTERISTICS;

BINDING SITES; CURRENT VOLTAGE CHARACTERISTICS; ELECTRODES; METALS; MOLECULES; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING SILICON; SEMICONDUCTOR QUANTUM DOTS;

SEMICONDUCTOR JUNCTIONS;

EID: 67649512451     PISSN: 10895639     EISSN: None     Source Type: Journal    
DOI: 10.1021/jp900301f     Document Type: Article

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