Metal/molecule/p-type GaAs heterostructure devices

Journal of Applied Physics

Volumn 100, Issue 2, 2006, Pages

  Lodha, Saurabh ^a   Janes, David B ^a  

^a Purdue University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEPLETION BARRIER; DEVICE CONDUCTIVITY; ELECTROSTATIC MODEL; METAL CONTACTS;

CRYSTALLINE MATERIALS; ELECTROSTATICS; MONOLAYERS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM ARSENIDE; THERMIONIC CATHODES;

HETEROJUNCTIONS;

EID: 33746879978     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2210569     Document Type: Article

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