Probing occupied states of the molecular layer in Au-Alkanedithiol - GaAs diodes

Journal of Physical Chemistry B

Volumn 109, Issue 12, 2005, Pages 5719-5723

  Hsu, Julia W P ^a   Lang, David V ^b   West, Kenneth W ^b   Loo, Yueh Lin ^c   Halls, Mathew D ^d   Raghavachari, Krishnan ^d  

^a SANDIA NATIONAL LABORATORIES   (United States)

^b LUCENT TECHNOLOGIES   (United States)

^c The University of Texas at Austin   (United States)

^d INDIANA UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY DEPENDENCE; MOLECULAR LAYERS; ORGANIC MOLECULES; SCHOTTKY DIODES;

DIODES; DOPING (ADDITIVES); FERMI LEVEL; GOLD; INTERFACES (MATERIALS); PHOTOEMISSION;

SEMICONDUCTING GALLIUM ARSENIDE;

ALKANE; ARSENIC; GALLIUM; GOLD; THIOL DERIVATIVE;

ARTICLE; CHEMICAL STRUCTURE; CHEMISTRY; ELECTROCHEMISTRY; ELECTRONICS;

ALKANES; ARSENIC; ELECTROCHEMISTRY; ELECTRONICS; GALLIUM; GOLD; MOLECULAR STRUCTURE; SULFHYDRYL COMPOUNDS;

EID: 17044373928     PISSN: 15206106     EISSN: None     Source Type: Journal    
DOI: 10.1021/jp044246s     Document Type: Article

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