Radiation hardness of the electrical properties of carbon nanotube network field effect transistors under high-energy proton irradiation

Nanotechnology

Volumn 17, Issue 22, 2006, Pages 5675-5680

  Hong, Woong Ki ^a   Lee, Chongoh ^a   Nepal, Dhriti ^a   Geckeler, Kurt E ^a   Shin, Kwanwoo ^b   Lee, Takhee ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

^b Sogang University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON NANOTUBES; ELECTRIC PROPERTIES; PROTON BEAMS; PROTON IRRADIATION; RADIATION HARDENING; RAMAN SCATTERING; SEMICONDUCTOR MATERIALS;

HIGH-ENERGY PROTON BEAMS; HIGH-ENERGY PROTON IRRADIATION; SINGLE WALLED CARBON NANOTUBE (SWNT);

FIELD EFFECT TRANSISTORS;

EID: 33846086060     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/17/22/023     Document Type: Article

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