Characterization of AlN metal-semiconductor-metal diodes in the spectral range of 44-360 nm: Photoemission assessments

Applied Physics Letters

Volumn 92, Issue 2, 2008, Pages

  BenMoussa, A ^a   Hochedez, J F ^a   Dahal, R ^b   Li, J ^b   Lin, J Y ^b   Jiang, H X ^b   Soltani, A ^c   De Jaeger, J C ^c   Kroth, U ^d   Richter, M ^d  

^a ROYAL OBSERVATORY OF BELGIUM   (Belgium)

^b KANSAS STATE UNIVERSITY   (United States)

^c INSTITUT D ELECTRONIQUE   (France)

^d PHYSIKALISCH TECHNISCHE BUNDESANSTALT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHARACTERIZATION; ELECTRON IRRADIATION; PHOTODIODES; PHOTOELECTRON SPECTROSCOPY; SCHOTTKY BARRIER DIODES; SOLAR ABSORBERS;

METAL-SEMICONDUCTOR-METAL (MSM); PHOTOEMISSION CURRENTS;

SEMICONDUCTOR MATERIALS;

EID: 38349111109     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2834701     Document Type: Article

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