Piezoelectric photothermal and photoreflectance spectra of In xGa1-xN grown by radio-frequency molecular beam epitaxy

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 5 B, 2006, Pages 4601-4603

  Kawano, Eiki ^a   Uchibori, Yuki ^a   Shimohara, Takashi ^a   Komaki, Hironori ^a   Katayama, Ryuji ^b   Onabel, Kentaro ^b   Fukuyama, Atsuhiko ^a   Ikarl, Tetsuo ^a  

^a UNIVERSITY OF MIYAZAKI   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

Band gap; Exciton; InGaN; Photoreflectance; Piezoelectric photothermal spectroscopy

Indexed keywords

COMPOSITION; EXCITONS; MOLECULAR BEAM EPITAXY; SPECTROSCOPIC ANALYSIS; SPECTRUM ANALYSIS;

BAND GAP; INGAN; PHOTOREFLECTANCE; PIEZOELECTRIC PHOTOTHERMAL SPECTROSCOPY;

INDIUM COMPOUNDS;

EID: 33744467409     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.4601     Document Type: Article

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