Nanoelectronics and Nanospintronics: Fundamentals and Materials Perspective

Materials Science Forum

Volumn 608, Issue , 2009, Pages 133-158

  Wang, Kang L ^a   Ovchinnikov, Igor V ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 67649127085     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: None     Document Type: Article

References (56)

1. B. H. Lee, L. Kang, W. J. Qi, R. Nieh, Y. Jeon, K. Onishi, and J. C. Lee, Tech. Dig. Int. Electron Devices Meet. (1999) 133.
2. I. V. Ovchinnikov and K. L. Wang, Applied Physics Letters 92 (2008) 093503.
3. M. A. Nielsen and I. L. Chuang, Quantum computation and quantum information, Cambridge University Press, 2000.
4. T. J. Walls, V. A. Sverdlov, and K. K. Likharev, in 2003 Third IEEE Conference on Nanotechnology. IEEE-NANO 2003. Proceedings (Cat. No. 03TH8700). IEEE. Part vol. 2, 2003, pp. 28-31 vol. 2. Piscataway, NJ, USA.
5. V. A. Sverdlov, T. J. Walls, and K. K. Likharev, IEEE Transactions on Electron Devices 50 (2003) 1926.
6. R. Chau, S. Datta, M. Doczy, B. Doyle, J. Jin, J. Kavalieros, A. Majumdar, M. Metz, and M. Radosavljevic, IEEE Transactions on Nanotechnology 4 (2005) 153.
7. E. Abe, K. M. Itoh, J. Isoya, and S. Yamasaki, Physical Review B-Condensed Matter 70 (2004) 33204.
8. K. Gopalakrishnan, P. B. Griffin, and J. D. Plummer, in Electron Devices Meeting, 2002. IEDM '02. Digest. International, 2002, p. 289.
9. K. Gopalakrishnan, P. B. Griffin, and J. D. Plummer, IEEE Transactions on Electron Devices 52 (2005) 69.
10. K. Gopalakrishnan, R. Woo, C. Jungemann, P. B. Griffin, and J. D. Plummer, IEEE Transactions on Electron Devices 52 (2005) 77.
11. W. Y. Choi, J. Y. Song, J. D. Lee, Y. J. Park, and B.-G. Park, in Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International, 2005, p. 955.
12. E.-H. Toh, G. H. Wang, G.-Q. Lo, N. Balasubramanian, C.-H. Tung, F. Benistant, L. Chan, G. Samudra, and Y.-C. Yeo, in Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International, 2005, p. 951.
13. N. Yamauchi, J. J. Hajjar, and R. Reif, IEEE Transactions on Electron Devices 38 (1991) 55.
14. A. L. Hodgkin and A. F. Huxley, J Physiol 116 (1952) 449.
15. J. Youxing, V. Ruta, C. Jiayun, A. Lee, and R. MacKinnon, Nature 422 (2003) 42.
16. S. Kubatkin, A. Danilov, M. Hjort, J. Cornil, J. L. Bredas, N. Stuhr-Hansen, P. Hedegard, and T. Bjernholm, Nature 425 (2003) 698.
17. A. W. Ghosh, T. Rakshit, and S. Datta, Nano Letters 4 (2004) 565.
18. U. Abelein, M. Born, K. K. Bhuwalka, M. Schindler, M. Schmidt, T. Sulima, and I. Eisele, in Microelectronics, 2006 25th International Conference on, 2006, p. 121.
19. U. Abelein, M. Born, K. K. Bhuwalka, M. Schindler, M. Schlosser, T. Sulima, and I. Eisele, IEEE Electron Device Letters 28 (2007) 65.
20. M. Born, U. Abelein, K. K. Bhuwalka, M. Schindler, M. Schmidt, A. Ludsteck, J. Schulze, and I. Eisele, Thin Solid Films 508 (2006) 323.
21. W. Hansch, V. Ramgopal Rao, and I. Eisele, in ESSDERC '97. Proceedings of the 27th European Solid-State Device Research Conference. Editions Frontieres. 1997, pp. 624-7. Paris, France. (H. Grunbacher, ed.).
22. J. Appenzeller, Y. M. Lin, J. Knoch, and P. Avouris, Physical Review Letters 93 (2004) 196805/1.
23. F. Leonard and J. Tersoff, Physical Review Letters 85 (2000) 4767.
24. P. Stefanyi, C. C. Zammit, P. Fozooni, M. J. Lea, and G. Ensell, Journal of Physics-Condensed Matter 9 (1997) 881.
25. P. F. Wang, K. Hilsenbeck, T. Nirschl, M. Oswald, C. Stepper, M. Weis, D. Schmitt-Landsiedel, and W. Hansch, Solid-State Electronics 48 (2004) 2281.
26. K. K. Bhuwalka, M. Born, M. Schindler, M. Schmidt, T. Sulima, and I. Eisele, Japanese Journal of Applied Physics 45 (2006) 3106.
27. X. Zheng, M. Pak, P.J. Huang, S. Choi, and K. L. Wang, Annual Device Research Conference Digest, New York, 56 (1998) 70.
28. E. V. Castro, K. S. Novoselov, S. V. Morozov, N. M. R. Peres, J. M. B. L. Dos Santos, J. Nilsson, F. Guinea, A. K. Geim, and A. H. C. Neto, Physical Review Letters 99 (2007) 216802.
29. M. Bailleul, R. Hollinger, and C. Fermon, Physical Review B 73 (2006) 104424.
30. A. K. Geim and K. S. Novoselov, Nature Materials 6 (2007) 183.
31. J. Nilsson, A. H. Castro Neto, F. Guinea, and N. M. R. Peres, Physical Review Letters 97 (2006) 266801.
32. S. Salahuddin and S. Datta, Applied Physics Letters 90 (2007) 93503.
33. R. Landauer, IBM Journal of Research & Development 5 (1961) 183.
34. Y. B. Aharonov, D., Phys. Rev 122 (1961) 1649.
35. S. A. Wolf, D. D. Awschalom, R. A. Buhrman, J. M. Daughton, S. von Molnar, M. L. Roukes, A. Y. Chtchelkanova, and D. M. Treger, Science 294 (2001) 1488.
36. L. Michalak, C. M. Canali, and V. G. Benza, Physical Review Letters 97 (2006) 096804/1.
37. A. Cehovin, C. M. Canali, and A. H. MacDonald, Physical Review B 68 (2003) 014423.
38. M. M. Deshmukh, S. Kleff, S. Gueron, E. Bonet, A. N. Pasupathy, J. von Delft, and D. C. Ralph, Physical Review Letters 87 (2001) 226801.
39. S. Kleff, J. von Delft, M. M. Deshmukh, and D. C. Ralph, Physical Review B 64 (2001)
40. J. A. Hutchby, G. I. Bourianoff, V. V. Zhirnov, and J. E. Brewer, IEEE Circuits & Devices Magazine 18 (2002) 28.
41. K. L. Wang, Journal of Nanoscience & Nanotechnology 2 (2002) 235.
42. D. B. Strukov and K. K. Likharev, Nanotechnology 16 (2005) 888.
43. O. Turel, L. Jung Hoon, M. Xiaolong, and K. K. Likharev, International Journal of Circuit Theory & Applications 32 (2004) 277.
44. A. G. Khitun and K. L. Wang, Journal of Nanoelectronics and Optoelectronics 1 (2006) 71.
45. L. Li-Ju, C. Chiu-Hung, H. Kuan-Hsun, and W. Chung-Yu, in Proceedings of the 2001 1st IEEE Conference on Nanotechnology. IEEE-NANO 2001 (Cat. No. 01EX516). IEEE. 2001, pp. 331-4. Piscataway, NJ, USA.
46. E. P. Blair and C. S. Lent, in 2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices (Cat. No. 03TH8679). IEEE. 2003, pp. 14-18. Piscataway, NJ, USA.
47. A. O. Orlov, R. K. Kummamuru, R. Ramasubramaniam, G. Toth, C. S. Lent, G. H. Bernstein, and G. L. Snider, Applied Physics Letters 78 (2001) 1625.
48. A. Zarandy and C. Rekeczky, IEEE Circuits and Systems Magazine 5 (2005) 36.
49. S. Espejo, R. Dominguez-Castro, G. Linan, and A. Rodriguez-Vazquez, in 1998 IEEE International Conference on Electronics, Circuits and Systems. Surfing the Waves of Science and Technology (Cat. No. 98EX196). IEEE. Part vol. 1, 1998, pp. 203-6 vol. 1. Piscataway, NJ, USA.
50. J. Kowalski, IEEE Transactions on Neural Networks 14 (2003) 1366.
51. P. Foldesy, A. Zarandy, C. Rekeczky, and T. Roska, International Journal of Circuit Theory and Applications 34 (2006) 409.
52. P. Dudek and P. J. Hicks, IEEE Transactions on Circuits and Systems I: Fundamental Theory and Applications 52 (2005) 13.
53. G. Linan, R. Dominguez-Castro, S. Espejo, and A. Rodriguez-Vazquez, in ESSCIRC 2001. Proceedings of the 27th European Solid-State Circuits Conference. Frontier Group. 2001, pp. 216-19. Paris, France. (H. Grunbacher, ed.).
54. G. Bilardi and F. P. Preparata, J. Parallel and Distributed Comp 27 (1995) 172.
55. A. Zarandy, C. Rekeczky, and L. Szatmari, in Proceedings of the 2003 IEEE International Symposium on Circuits and Systems (Cat. No. 03CH37430). IEEE. Part vol. 3, 2003, pp. III-518-21 vol. 3. Piscataway, NJ, USA.
56. K. K. Likharev, Journal of Vacuum Science & Technology B (Microelectronics and Nanometer Structures) 25 (2007) 2531.