Impact ionization MOS (I-MOS) - Part I : Device and circuit simulations

IEEE Transactions on Electron Devices

Volumn 52, Issue 1, 2005, Pages 69-76

  Gopalakrishnan, Kailash ^a,b   Griffin, Peter B ^a   Plummer, James D ^a  

^a STANFORD UNIVERSITY   (United States)

^b IBM ALMADEN RESEARCH CENTER   (United States)

Author keywords

5 mV dec; Avalanche; Avalanche photodiode (APD); Gate control of impact ionization; Germanium; Hot carriers; Impact ionization (I MOS); Impact ionization avalanche transit time (IMPATT); kT q; Low static power; Modulated breakdown; MOSFET; Nonlinearity; P i n; Silicon; Subthreshold slope

Indexed keywords

AVALANCHE DIODES; COMPUTER SIMULATION; ELECTRIC BREAKDOWN; GATES (TRANSISTOR); HOT CARRIERS; IMPACT IONIZATION; PHOTODIODES; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR JUNCTIONS;

AVALANCHE PHOTODIODE (APD); GATE CONTROL-OF-IMPACT IONIZATION; IMPACT IONIZATION AVALANCHE TRANSIT TIME (IMPATT); LOW STATIC POWER; MODULATED BREAKDOWN; SUBTHRESHOLD SLOPE;

MOSFET DEVICES;

EID: 12344320429     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2004.841344     Document Type: Article

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