Quantum mechanical modeling of advanced sub-10 nm MOSFETs

Proceedings of the IEEE Conference on Nanotechnology

Volumn 1, Issue , 2003, Pages 28-31

  Walls, T J ^a   Sverdlov, V A ^a   Likharev, K K ^a  

^a STONY BROOK UNIVERSITY   (United States)

Author keywords

CMOS technology; Electrodes; Electrons; Electrostatics; Joining processes; MOSFETs; Numerical models; Poisson equations; Quantum mechanics; Semiconductor device modeling

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRODES; ELECTRONS; ELECTROSTATICS; MOS DEVICES; NANOTECHNOLOGY; NUMERICAL MODELS; POISSON EQUATION; QUANTUM THEORY; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICES; SENSITIVITY ANALYSIS; TRANSISTORS;

CMOS TECHNOLOGY; GATE VOLTAGE THRESHOLD; INTRINSIC CHANNEL; JOINING PROCESS; MOSFETS; QUANTUM MECHANICAL MODEL; SELF-CONSISTENT SOLUTION; TRANSISTOR PARAMETERS;

MOSFET DEVICES;

EID: 84888917407     PISSN: 19449399     EISSN: 19449380     Source Type: Conference Proceeding    
DOI: 10.1109/NANO.2003.1231706     Document Type: Conference Paper

References (20)

1. (a) R. Sasajima, K. Fujimaru, and H. Matsumura, Appl. Phys. Lett., vol. 74, pp. 3215-3217, May 1999;
2. (b) H. Kawaura, T. Sakamoto, T. Baba, Appl. Phys. Lett., vol. 76, pp. 3810-3812, May 2000;
3. J. Appenzeller et al., Appl. Phys. Lett., vol. 77, pp.298-300, July 2000;
4. F. Boeff et al., Techn. Dig. IEDM'2001, pp. 637-640;
5. (e) B. Yu et al., in Techn. Dig. IEDM'2001, pp. 937-939;
6. (f) B. Yu et al., in Techn. Dig. IEDM'2002, pp. 251-254;
7. (g) B. Doris et al., in Techn. Dig. IEDM'2002, pp. 267-270;
8. (h) A. Hokazono et al., in Techn. Dig. IEDM'2002, pp. 639-642.
9. The International Technology Roadmap for Semiconductors, 2001 Edition, 2002 Update, available on the Web at public.itrs.net.
10. D. J. Frank et al. Proc. IEEE, vol. 89, pp. 259-288, March 2001
11. K. K. Likharev, "Electronics Below 10 nm", in Nano and Giga Challenges in Microelectronics, J. Greer, A. Korkin and J. Labanowsky, Eds. Amsterdam: Elsevier, 2003, in press; preprint available on the Web at http://rsfq1.physics.sunysb.edu/~likharev/nano/NanoGiga.pdf.
12. F. Pikus and K. Likharev, Appl. Phys. Lett., vol. 71, pp. 3661-3663, June 1997.
13. Y. Naveh and K. Likharev, IEEE Electron. Dev. Lett., vol. 21, pp. 242-244, January 2000.
14. D. Esseni et al., in Techn. Dig. IEDM'2001, pp. 445-449.
15. K. Uchida et al., in Techn. Dig. IEDM'2002, pp. 47-50.
16. (a) R. Venugopal et al., J. Appl. Phys., vol. 92, pp. 3730-3739, October 2002;
17. (b) J. Wang and M. Lundstrom, in Techn. Dig. IEDM'2002, pp. 707-710.
18. A. Svizhenko and M. P. Anantram, "Role of scattering in nanotransistors", IEEE Trans. on Electron Dev., in press.
19. V. A. Sverdlov, T. J. Walls, and K. K. Likharev, "Nanoscale silicon MOSFETs: A theoretical study", IEEE Trans. on Electron. Dev., in press.
20. V. A. Sverdlov, X. Oriols, K. K. Likharev, IEEE Trans. on Nanotechnology, vol. 2, pp. 59-63, March 2003.