Sub-50 nm high performance PDBFET with impact ionization

Thin Solid Films

Volumn 508, Issue 1-2, 2006, Pages 323-325

  Born, M ^a   Abelein, U ^a   Bhuwalka, K K ^a   Schindler, M ^a   Schmidt, M ^a   Ludsteck, A ^a   Schulze, J ^a   Eisele, I ^a  

^a BUNDESWEHR UNIVERSITY MUNICH   (Germany)

Author keywords

Impact ionization; PDBFET; Si MBE; Sub threshold swing

Indexed keywords

CHANNEL CAPACITY; ELECTRIC POTENTIAL; MOLECULAR BEAM EPITAXY; MOSFET DEVICES; PERFORMANCE;

DRAIN BIAS; PDBFET; SI-MBE; SUB-THRESHOLD SWING;

IMPACT IONIZATION;

EID: 33646113604     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2005.07.329     Document Type: Article

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