A new critical point in the non-linear conductivity due to variable-range hopping in Si

Journal of Physics Condensed Matter

Volumn 9, Issue 4, 1997, Pages 881-888

  Stefanyi, P ^a   Zammit, C C ^a   Fozooni, P ^a   Lea, M J ^a   Ensell, G ^b  

^a UNIVERSITY OF LONDON   (United Kingdom)

^b UNIVERSITY OF SOUTHAMPTON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0346186320     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/9/4/008     Document Type: Article

References (22)

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19. A similar feature can be seen in figure 1 of [8] in an ion-implanted Si:As sensor at 78 mK.
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