Reduction of discrete-dopant-induced high-frequency characteristic fluctuations in nanoscale CMOS circuit

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Volumn , Issue , 2008, Pages 209-212

  Li, Yiming ^a   Hwang, Chih Hong ^a   Yeh, Ta Ching ^a   Huang, Hsuan Ming ^a   Li, Tien Yeh ^a   Cheng, Hui Wen ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Fluctuation; High frequency property; Modeling and simulation; Nanoscale MOSFETs; Random dopant; Suppression

Indexed keywords

FLUCTUATION; HIGH FREQUENCY PROPERTY; MODELING AND SIMULATION; NANOSCALE MOSFETS; RANDOM DOPANT; SUPPRESSION;

COMPUTER SIMULATION; INTEGRATED CIRCUIT MANUFACTURE; MOSFET DEVICES; NANOSTRUCTURED MATERIALS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICES;

DOPING (ADDITIVES);

EID: 67349285478     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SISPAD.2008.4648274     Document Type: Conference Paper

References (10)

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