Intrinsic parameter fluctuations in nanometre scale thin-body SOI devices introduced by interface roughness

Superlattices and Microstructures

Volumn 34, Issue 3-6, 2003, Pages 283-291

  Brown, Andrew R ^a   Adamu Lema, Fikru ^a   Asenov, Asen ^a  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

Author keywords

Fluctuations; Interface roughness; Quantum mechanics; Scaling; SOI

Indexed keywords

COMPUTER SIMULATION; DIFFUSION; INTERFACES (MATERIALS); MOSFET DEVICES; QUANTUM THEORY; SEMICONDUCTOR DOPING; SURFACE ROUGHNESS;

FLUCTUATIONS; INTERFACE ROUGHNESS; SCALING; SOI;

SILICON ON INSULATOR TECHNOLOGY;

EID: 3242737441     PISSN: 07496036     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.spmi.2004.03.026     Document Type: Conference Paper

References (8)

1. Choi Y.-K., Ha D., King T.-J., Hu C. IEEE Electron Dev. Lett. 22:2001;447.
2. Doris B., et al. IEDM 2002. 2002;267.
3. Uchida K., Watanabe H., Kinoshita A., Koga J., Numata T., Takagi S. IEDM 2002. 2002;47.
4. Asenov A., Brown A.R., Davies J.H., Saini S. IEEE Trans. CAD ICs Sys. 18:1999;1588.
5. Asenov A., Slavcheva G., Brown A.R., Davies J.H., Saini S. IEEE Trans. Electron Dev. 48:2001;722.
6. Asenov A., Kaya S., Davies J.H. IEEE Trans. Electron Dev. 49:2002;112.
7. Goodnick S.M., Ferry D.K., Wilmsen C.W., Liliental Z., Fathy D., Krivanek O.L. Phys. Rev. B. 32:1985;8171.
8. Brown A.R., Asenov A., Watling J.R. IEEE Trans. Nanotechnol. 1:2002;195.