Valence-band tunneling enhanced hot carrier degradation in ultra-thin oxide nMOSFETs

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2000, Pages 139-141

  Tsai, C W ^a   Gu, S H ^a   Chiang, L P ^a   Wang, T ^a   Liu, Y C ^a   Huang, L S ^a   Wang, M C ^a   Hsia, L C ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION; ELECTRON ENERGY LEVELS; ELECTRON TUNNELING; RELIABILITY; SUBSTRATES;

CARRIER DEGRADATION; VALANCE-BAND TUNNELING;

MOSFET DEVICES;

EID: 0034453526     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

1. Low voltage hot-electron effects in short channel MOSFETs
2. A new analytical model for low voltage hot electron taking Auger recombination as well as phonon scattering process into account
3. Auger recombination enhanced hot carrier degradation in nMOSFETs with positive substrate bias
4. Degradation mechanisms of thin film SIMOX SOI-MOSFET characteristics optical and electrical evaluation
5. A high-performance 0.08μm CMOS
6. Hot carrier effects in nMOSFETs in 0.1μm CMOS technology
7. A study of hot-carrier degradation in n and p-MOSFETs with ultra-thin gate oxides in the direct-tinneling regime
8. A dynamic threshold voltage MOSFET (DTMOS) for ultra-low voltage operation