Two concerns about NBTI issue: Gate dielectric scaling and increasing gate current

IEEE International Reliability Physics Symposium Proceedings

Volumn 2004-January, Issue January, 2004, Pages 28-34

  Tsujikawa, Shimpei ^a   Akamatsu, Yasuhko ^a   Umeda, Hiroshi ^a   Yugami, Jiro ^a  

^a RENESAS TECHNOLOGY CORP   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION; DIELECTRIC MATERIALS; DIFFUSION; ELECTRIC FIELDS; ELECTRODES; ELECTRON TUNNELING; ELECTRONS; GATE DIELECTRICS; HYDROGEN; THERMODYNAMIC STABILITY;

ACCELERATION TESTS; DIFFUSION BEHAVIOR; DIFFUSION-CONTROLLED MODEL; GATE DIELECTRIC SCALING; NEGATIVE BIAS TEMPERATURE INSTABILITY; NUMERICAL CALCULATION; SION GATE DIELECTRICS; VOLTAGE ACCELERATION;

INTEGRATED CIRCUITS;

EID: 67349260477     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2004.1315297     Document Type: Conference Paper

References (11)

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