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Volumn 214, Issue , 2000, Pages 280-283
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Luminescence properties of ZnO films grown on GaAs substrates by molecular-beam epitaxy excited by electron-cyclotron resonance oxygen plasma
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Author keywords
[No Author keywords available]
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Indexed keywords
ELECTRON CYCLOTRON RESONANCE;
EXCITONS;
MOLECULAR BEAM EPITAXY;
OPTICAL PROPERTIES;
PHOTOLUMINESCENCE;
PLASMA APPLICATIONS;
SEMICONDUCTING GALLIUM ARSENIDE;
ZINC OXIDE;
ZINC SULFIDE;
DEEP LEVEL EMISSION;
ELECTRON CYCLOTRON RESONANCE OXYGEN PLASMA;
METALLORGANIC MOLECULAR BEAM EPITAXY;
ULTRAVIOLET LUMINESCENCE;
FILM GROWTH;
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EID: 0033703998
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/S0022-0248(00)00091-9 Document Type: Article |
Times cited : (46)
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References (14)
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