Polycrystalline AlN films with preferential orientation by plasma enhanced chemical vapor deposition

Thin Solid Films

Volumn 516, Issue 15, 2008, Pages 4868-4875

  Sanchez G ^a,b   Wu, A ^a   Tristant, P ^a   Tixier, C ^a   Soulestin, B ^a   Desmaison, J ^a   Bologna Alles, A ^b  

^a UNIVERSITY OF LIMOGES   (France)

^b UNIVERSIDAD DE LA REPÚBLICA   (Uruguay)

Author keywords

Aluminum nitride; Bulk acoustic wave devices; Fourier transform infrared spectroscopy; Piezoelectric films; Plasma enhanced chemical vapor deposition; Surface acoustic wave devices; Thin films; X ray diffraction

Indexed keywords

ACOUSTIC BULK WAVE DEVICES; ACOUSTIC SURFACE WAVE DEVICES; ALUMINUM COMPOUNDS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POLYCRYSTALLINE MATERIALS; X RAY DIFFRACTION;

BIAS POTENTIALS; PIEZOELECTRIC FILMS; POLYCRYSTALLINE FILMS; SUBSTRATE TEMPERATURE;

THIN FILMS;

EID: 42649113437     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2007.09.030     Document Type: Article

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