Effect of rapid thermal annealing of sputtered aluminium nitride film in an oxygen ambient

Materials Science in Semiconductor Processing

Volumn 9, Issue 6, 2006, Pages 1137-1141

  Jang, Kyungsoo ^a   Lee, Kwangsoo ^a   Kim, Junsik ^a   Hwang, Sunghyun ^a   Lee, Jeongin ^a   Kumar Dhungel, Suresh ^a   Jung, Sungwook ^a   Yi, Junsin ^a  

^a Sungkyunkwan University   (South Korea)

Author keywords

Aluminium nitride; FTIR; Negative VFB; RTA; Sputtering; XRD

Indexed keywords

ALUMINUM COMPOUNDS; ELECTRIC PROPERTIES; FOURIER TRANSFORM INFRARED SPECTROSCOPY; MAGNETRON SPUTTERING; MIS DEVICES; RAPID THERMAL ANNEALING; X RAY DIFFRACTION;

ALUMINIUM NITRIDE; OXYGEN AMBIENT; POST DEPOSITION; SUBSTRATE TEMPERATURES;

THIN FILMS;

EID: 33846104973     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2006.10.052     Document Type: Article

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