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Volumn 96, Issue 1, 2009, Pages 161-169
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Imaging and spectroscopy of defects in semiconductors using aberration-corrected STEM
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Author keywords
[No Author keywords available]
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Indexed keywords
ABERRATION CORRECTORS;
ABERRATION-CORRECTED STEM;
DEFECTS IN SEMICONDUCTORS;
DEPTH SENSITIVITY;
ELECTRON PROBE;
FORMING ANGLE;
GATE-DIELECTRIC INTERFACES;
IMAGE SIGNAL;
IMPURITY ATOMS;
INTERFACE STRUCTURES;
SCANNING TRANSMISSION ELECTRON MICROSCOPES;
SILICON SUBSTRATES;
SIMULTANEOUS ACQUISITION;
SINGLE ATOMS;
SPATIAL RESOLUTION;
VALENCE STATE;
ABERRATIONS;
ATOMS;
DEFECT STRUCTURES;
DISSOCIATION;
ELECTRON ENERGY LEVELS;
ELECTRON SCATTERING;
ELECTRONS;
GATE DIELECTRICS;
GATES (TRANSISTOR);
HAFNIUM;
HAFNIUM COMPOUNDS;
MATERIALS PROPERTIES;
PROBES;
SEMICONDUCTOR MATERIALS;
SIGNAL PROCESSING;
SILICON COMPOUNDS;
SILICON OXIDES;
TRANSMISSION ELECTRON MICROSCOPY;
ELECTRON ENERGY LOSS SPECTROSCOPY;
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EID: 67349127522
PISSN: 09478396
EISSN: 14320630
Source Type: Journal
DOI: 10.1007/s00339-008-4979-z Document Type: Article |
Times cited : (10)
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References (32)
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