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Volumn 96, Issue 1, 2009, Pages 161-169

Imaging and spectroscopy of defects in semiconductors using aberration-corrected STEM

Author keywords

[No Author keywords available]

Indexed keywords

ABERRATION CORRECTORS; ABERRATION-CORRECTED STEM; DEFECTS IN SEMICONDUCTORS; DEPTH SENSITIVITY; ELECTRON PROBE; FORMING ANGLE; GATE-DIELECTRIC INTERFACES; IMAGE SIGNAL; IMPURITY ATOMS; INTERFACE STRUCTURES; SCANNING TRANSMISSION ELECTRON MICROSCOPES; SILICON SUBSTRATES; SIMULTANEOUS ACQUISITION; SINGLE ATOMS; SPATIAL RESOLUTION; VALENCE STATE;

EID: 67349127522     PISSN: 09478396     EISSN: 14320630     Source Type: Journal    
DOI: 10.1007/s00339-008-4979-z     Document Type: Article
Times cited : (10)

References (32)
  • 18
    • 33749667933 scopus 로고    scopus 로고
    • In characterization and metrology for ULSI technology
    • ed. by D.G. Seiler, A.C. Diebold, R. McDonald, C.R. Ayre, R.P. Khosla, S. Zollner, E.M. Secula
    • K. van Benthem, S.N. Rashkeev, S.J. Pennycook, in Characterization and Metrology for ULSI Technology, ed. by D.G. Seiler, A.C. Diebold, R. McDonald, C.R. Ayre, R.P. Khosla, S. Zollner, E.M. Secula. American Institute of Physics Conference Proceedings, vol. 788 (2005), p. 79
    • (2005) American Institute of Physics Conference Proceedings , vol.788 , pp. 79
    • Van Benthem, K.1    Rashkeev, S.N.2    Pennycook, S.J.3
  • 32
    • 67349163127 scopus 로고    scopus 로고
    • 5794 W. Las Positas Blvd., Pleasanton, CA 94588, USA
    • Gatan Inc., 5794 W. Las Positas Blvd., Pleasanton, CA 94588, USA. www.gatan.com


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.