Fabrication of half-pitch 32-45-nm SRAM patterns with EUVL

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7271, Issue , 2009, Pages

  Tanaka, Yuusuke ^a   Aoyama, Hajime ^a   Magoshi, Shunko ^a   Tawarayama, Kazuo ^a   Shirai, Seiichiro ^a   Tanaka, Hiroyuki ^a  

^a SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

Author keywords

EUV1; EUVL; Fidelity; MET 2D; Resist blur; SFET; SRAM; SSR2; SSR3

Indexed keywords

EUV1; EUVL; FIDELITY; MET-2D; RESIST BLUR; SFET; SRAM; SSR2; SSR3;

DEGRADATION; FABRICATION; MASKS; NANOTECHNOLOGY; STATIC RANDOM ACCESS STORAGE; ULTRAVIOLET DEVICES;

EXTREME ULTRAVIOLET LITHOGRAPHY;

EID: 67149091212     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.813492     Document Type: Conference Paper

References (13)

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