High-quality GaN nanowires synthesized using a CVD approach

Applied Physics A: Materials Science and Processing

Volumn 75, Issue 6, 2002, Pages 691-693

  Wang, J C ^a   Feng, S Q ^a   Yu, D P ^a  

^a PEKING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CATALYSTS; CHEMICAL VAPOR DEPOSITION; ELECTRON DIFFRACTION; GALLIUM NITRIDE; INDIUM COMPOUNDS; MORPHOLOGY; SCANNING ELECTRON MICROSCOPY; SILICON; SYNTHESIS (CHEMICAL); TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

NANOWIRES;

NANOSTRUCTURED MATERIALS;

EID: 0036887330     PISSN: 09478396     EISSN: None     Source Type: Journal    
DOI: 10.1007/s00339-002-1455-z     Document Type: Article

References (14)