Modeling and experimental analysis of AlGaN MOVPE in commercial vertical high-speed rotating-disk reactors

Journal of Crystal Growth

Volumn 261, Issue 2-3, 2004, Pages 190-196

  Mazaev, K M ^a   Lobanova, A V ^a   Yakovlev, E V ^a   Talalaev, R A ^a   Galyukov, A O ^a   Makarov, Yu N ^a   Gotthold, D ^b   Albert, B ^b   Kadinski, L ^b   Peres, B ^b  

^a STR Inc   (United States)

^b EMCORE CORPORATION   (United States)

Author keywords

A1. Computer simulation; A1. Vertical rotating disk reactor; A3. Metalorganic vapor phase epitaxy; B1. Nitrides

Indexed keywords

ALUMINUM; COMPUTER SIMULATION; CONDENSATION; DECOMPOSITION; DEPOSITION; GALLIUM NITRIDE; HYDRIDES; LIGHT EMITTING DIODES; NUMERICAL METHODS; OPTIMIZATION;

ROTATING-DISK REACTORS; TEMPERATURE GRADIENTS;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 0347415802     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2003.11.011     Document Type: Conference Paper

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