Reliability characterization of stress-induced charge trapping in HfO 2 by electrostatic discharge impulse stresses

Journal of Applied Physics

Volumn 105, Issue 10, 2009, Pages

  Chen, Chun Heng ^a   Hwang, Huey Liang ^a   Chiu, Fu Chien ^b  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b MING CHUAN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BONDING NATURE; CHARGE TRAPPING CHARACTERISTICS; DC STRESS; DEFECT GENERATION; DEGRADATION CHARACTERISTICS; DERIVATIVE METHOD; ESD STRESS; HIGH STRESS; HIGH-FIELD; HOLE TRAPPING; IMPULSE STRESS; LOW STRESS; METAL OXIDES; OXIDE BREAKDOWN; RELIABILITY CHARACTERIZATION; STRESS REGIME; STRESS VOLTAGES; STRESS-INDUCED; TRAPPED CHARGE;

ELECTROSTATIC DEVICES; ELECTROSTATIC DISCHARGE; HAFNIUM COMPOUNDS; METALLIC COMPOUNDS; SILICON COMPOUNDS;

CHARGE TRAPPING;

EID: 66549130595     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3132091     Document Type: Article

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