Positive bias temperature instability (PBTI) characteristics of contact-etch-stop-layer-induced local-tensile-strained HfO2 nMOSFET

IEEE Electron Device Letters

Volumn 29, Issue 12, 2008, Pages 1340-1343

  Wu, Woei Cherng ^a   Chao, Tien Sheng ^a   Chiu, Te Hsin ^a   Wang, Jer Chyi ^b   Lai, Chao Sung ^c   Ma, Ming Wen ^a   Lo, Wen Cheng ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NANYA TECHNOLOGY CORPORATION   (Taiwan)

^c CHANG GUNG UNIVERSITY   (Taiwan)

Author keywords

Contact etch stop layer (CESL); HfO2; Positive bias temperature instability (PBTI)

Indexed keywords

ELECTRIC INSULATORS; MOSFET DEVICES; SILICON; TURBULENT FLOW;

CHARGE PUMPING CURRENTS; CONTACT ETCH STOP LAYER (CESL); HFO2; INTERFACE DEGRADATIONS; NMOSFET; POSITIVE BIAS TEMPERATURE INSTABILITIES; POSITIVE BIAS TEMPERATURE INSTABILITY (PBTI); SHALLOW TRAPS; TRAPPING LEVELS;

HAFNIUM COMPOUNDS;

EID: 57049084515     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.2005519     Document Type: Article

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