Accelerated dielectric breakdown and wear out standard testing methods and structures for reliability evaluation of thin oxides

Microelectronics Reliability

Volumn 39, Issue 5, 1999, Pages 597-613

  Ghibaudo, G ^a   Pananakakis, G ^a   Kies, R ^a   Vincent, E ^b   Papadas, C ^b  

^a Grenoble INP Phelma   (France)

^b STMICROELECTRONICS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; CURRENT DENSITY; DIELECTRIC PROPERTIES OF SOLIDS; ELECTRIC BREAKDOWN OF SOLIDS; EXTRAPOLATION; OXIDES; PROM; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES; STANDARDS; STRESS ANALYSIS; WEAR OF MATERIALS;

DIELECTRIC BREAKDOWN;

MOS DEVICES;

EID: 0032683326     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(99)00042-6     Document Type: Article

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