Gate dielectric breakdown: A focus on ESD protection

IEEE International Reliability Physics Symposium Proceedings

Volumn 2004-January, Issue January, 2004, Pages 399-404

  Weir, Bonnie E ^a   Leung, Che Choi ^a   Silverman, Paul J ^a   Alam, Muhammad A ^a  

^a AGERE SYSTEMS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; ELECTRIC BREAKDOWN; ELECTROSTATIC DEVICES; ELECTROSTATIC DISCHARGE; KNOWLEDGE BASED SYSTEMS; TIME MEASUREMENT;

DECOUPLING CAPACITOR; HIGH PERFORMANCE APPLICATIONS; KNOWLEDGE BASE; OPERATING VOLTAGE; OXIDE BREAKDOWN; SHORT TIME SCALE; STATISTICAL VARIATIONS; VOLTAGE ACCELERATION;

GATE DIELECTRICS;

EID: 84932097583     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2004.1315359     Document Type: Conference Paper

References (19)

1. C. Duvvury and A. Amerasekera, Semicond. Sci. Techno] ., Vol. 11 pp. 833, 1996.
2. B.K. Ridley, Journ. Appl. Phys., Vol. 46 pp. 998, 1975.
3. Y. Chen et al. International Reliability Physics Tymposium Proceedings, pp. 87,1998.
4. B. Wang, J.S. Suehle, E.M. Vogel, J.B. Bernstein, Tlectron Device Letters, IEEE , Vol. 22 pp.224 , 2001.
5. K. P. Cheung, Microelectronics Reliab., Vol. 41, pp. 745, 2001.
6. K. Matsuzawa, H. Satake, C. Sutou, H. Kawashima, TISPAD Proceedings, pp. 129, 2003.
7. J. Wu, P. Juliano, E. Rosenbaum, Electrical Tverstress/Electrostatic Discharge Symposium Troceedings, pp. 287, 2000.
8. M. A. Alam, J. Bude, A. Ghetti, Internationa] Reliability Thysics Symposium Proceedings, pp. 21, 2000.
9. B. E. Weir, P. J. Silverman, M.A. Alam, Y. Ma, Troceedings of the Electrochemical Society, pp. 465, 2002.
10. J. Barth et al. Electrical Overstress/Electrostatic Tischarge Symposium Proceedings, pp. 85,2000.
11. During and after first dielectric breakdown, when the TUT resistance decreases, constant voltage is not Taintained.
12. A, Berman, International Reliability Physics Symposium Troceedings, pp. 204, 1981.
13. For the projections for the PFET, which are over 2V rather than IV, we have taken into account the curvature of the voltage acceleration. Similar values can be found in: B. E. Weir etal., Semicond. Sci. Technol. Vol. 15, pp. 455, 2000;
14. H. Stathis, International Reliability Physics Symposium Proceedings, pg, 132, 2001;
15. P, E. Nicollian, W. R. Hunter, and J. C. Hu, International Reliability Physics Symposium Proceedings, pp. 7, 2000.
16. From our DC measurements, also in agreement with E. Y. Wu et al, Semicond. Sci. Technol. Vol. 15, pp. 425, 2000.
17. S. Lombardo, J. H. Stathis, B. P. Linder, Physical Review Letters, Vol. 90, pp. 167601, 2003.
18. M. A. Alam, B. E. Weir P. J. Silverman, Trans. Elec. Dev. Vol. 49, pp. 232, 2002.
19. N. A. Dumin, K. Liu, S-H. Yang, International Reliability Physics Symposium Proceedings, pp. 73, 200