Capacitance-voltage and retention characteristics of Pt/ SrBi 2Ta2O9/HfO2/Si structures with various buffer layer thickness

Applied Physics Letters

Volumn 94, Issue 21, 2009, Pages

  Tang, M H ^a,b   Sun, Z H ^a   Zhou, Y C ^a   Sugiyama, Y ^c   Ishiwara, H ^b  

^a XIANGTAN UNIVERSITY   (China)

^b Tokyo Institute of Technology ^*  (Japan)

^c FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

APPLIED VOLTAGES; BUFFER LAYER THICKNESS; CAPACITANCE VOLTAGE; ELECTRICAL PROPERTY; LAYER THICKNESS; MEASURED DATA; MEMORY WINDOW; METAL-FERROELECTRIC-INSULATOR-SEMICONDUCTOR STRUCTURES; MFIS STRUCTURE; RETENTION CHARACTERISTICS;

BUFFER LAYERS; CAPACITANCE; FERROELECTRIC THIN FILMS; FERROELECTRICITY; HAFNIUM COMPOUNDS; INSULATION; SEMICONDUCTOR DIODES; TANTALUM;

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 66549112549     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3147859     Document Type: Article

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