Structural and electrical properties of metal-ferroelectric-insulator-semiconductor transistors using a Pt/Bi3.25Nd0.75Ti3O12/Y2O3/Si structure

Solid-State Electronics

Volumn 51, Issue 3, 2007, Pages 371-375

  Tang, Ming Hua ^a   Zhou, Yi Chun ^a   Zheng, Xue Jun ^a   Yan, Zhi ^b   Cheng, Chuan Pin ^a   Ye, Zhi ^a   Hu, Zen Shun ^a  

^a XIANGTAN UNIVERSITY   (China)

^b SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

Author keywords

BNT; Memory window; MFIS; Retention characteristic; Y2O3

Indexed keywords

BISMUTH COMPOUNDS; CAPACITORS; FERROELECTRIC DEVICES; HYSTERESIS; LEAKAGE CURRENTS; NONVOLATILE STORAGE; PERMITTIVITY; THIN FILMS;

CHEMICAL SOLUTION DEPOSITION (CSD); ELECTRON BEAM EVAPORATION; INTERFACIAL DIFFUSION; MEMORY WINDOW; METAL-FERROELECTRIC-INSULATOR-SEMICONDUCTOR (MFIS); RETENTION CHARACTERISTIC;

MISFET DEVICES;

EID: 33947654959     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2006.11.014     Document Type: Article

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