Memory effects of SrBi2Ta2O9 capacitor on silicon with a silicon nitride buffer

Integrated Ferroelectrics

Volumn 22, Issue 1-4, 1998, Pages 213-221

  Han, Jin Ping ^a   Guo, Xin ^a   Ma, T P ^a  

^a Yale University   (United States)

Author keywords

Ferroelectrics; FET; Memory; Silicon Nitride Buffer; SrBi2Ta2O9

Indexed keywords

ANNEALING; CAPACITANCE MEASUREMENT; CAPACITORS; DEGRADATION; FATIGUE TESTING; NONVOLATILE STORAGE; POLARIZATION; SILICON; SILICON NITRIDE; STRONTIUM COMPOUNDS; SUBSTRATES; VOLTAGE MEASUREMENT;

STRONTIUM BISMUTH TANTALATE;

FERROELECTRIC MATERIALS;

EID: 0032309917     PISSN: 10584587     EISSN: None     Source Type: Journal    
DOI: 10.1080/10584589808208043     Document Type: Article

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